Jin Wei
0000-0001-6124-0110
Hong Kong University of Science and Technology
47 papers found
Refreshing results…
SiC trench MOSFET with self-biased p-shield for low R ON-SP and low OFF-state oxide field
A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance
SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications
Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode
Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices
High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture
Charge storage effect in SiC trench MOSFET with a floating p-shield and its impact on dynamic performances
High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer
Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT
Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform
Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
Maximizing the performance of 650 V p-GaN gate HEMTs: Dynamic ron characterization and gate-drive design considerations
Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic Drain
Proposal of a novel GaN/SiC hybrid FET (HyFET) with enhanced performance for high-voltage switching applications
Impact of integrated photonic-ohmic drain on static and dynamic characteristics of GaN-on-Si heterojunction power transistors
Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss
Critical heterostructure design for low on-resistance normally-off double-channel MOS-HEMT
SiC Trench MOSFET with Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor
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