Published in
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
DOI: 10.1109/ispsd.2016.7520787
Links
Tools
Proposal of a novel GaN/SiC hybrid FET (HyFET) with enhanced performance for high-voltage switching applications
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 