Jin Wei
0000-0001-6124-0110
Hong Kong University of Science and Technology
47 papers found
Refreshing results…
Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs
Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests
A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET
Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs
Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline $\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}}$ Channel
Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET
Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance
Photon emission and current-collapse suppression of AlGaN/GaN field-effect transistors with photonic–ohmic drain at high temperatures
SiC trench IGBT with diode-clamped p-shield for oxide protection and enhanced conductivity modulation
Reverse-blocking AlGaN/GaN normally-off MIS-HEMT with double-recessed gated Schottky drain
Dependence of ${V}_{\text {TH}}$ Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET
Modeling the gate driver IC for GaN transistor: A black-box approach
Bias Temperature Instability of Normally-Off GaN MIS-FET with Low-Pressure Chemical Vapor Deposition SiN x Gate Dielectric
Simulation Study of a Power MOSFET with Built-in Channel Diode for Enhanced Reverse Recovery Performance
An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs
Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
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