Gaofei Tang
0000-0002-1051-588X
Hong Kong University of Science and Technology
3 papers found
Refreshing results…
Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance
Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform
Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
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