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2018 IEEE International Electron Devices Meeting (IEDM)

DOI: 10.1109/iedm.2018.8614687

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Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline $\text{GaO}_{\mathrm{x}}\mathrm{N}_{1-\mathrm{x}}$ Channel

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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