Published in
2016 IEEE International Electron Devices Meeting (IEDM)
DOI: 10.1109/iedm.2016.7838388
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Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
Proceedings article published in 2016 by
Mengyuan Hua,
Zhaofu Zhang,
Jin Wei 
,
Jiacheng Lei,
Gaofei Tang,
Kai Fu,
Yong Cai,
Baoshun Zhang,
Kevin J. Chen
,
Jiacheng Lei,
Gaofei Tang,
Kai Fu,
Yong Cai,
Baoshun Zhang,
Kevin J. Chen
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