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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

DOI: 10.23919/ispsd.2017.7988900

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High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer

Proceedings article published in 2017 by Mengyuan Hua, Zhaofu Zhang, Qingkai Qian, Jin Wei ORCID, Qilong Bao, Gaofei Tang, Kevin J. Chen
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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