Yunyou Lu
0000-0003-0951-8634
Hong Kong University of Science and Technology
27 papers found
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Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET
Impact of Vth shift on Ron in E/D-mode GaN-on-Si power transistors: Role of dynamic stress and gate overdrive
Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT
On-chip addressable Schottky-on-heterojunction light-emitting diode arrays on AlGaN/GaN-on-Si platform: On-chip addressable Schottky-on-heterojunction light-emitting diode arrays on AlGaN/GaN-on-Si platform
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor
III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances
Nitridation interfacial-layer technology for enhanced stability in GaN-based power devices
AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance
Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs (Phys. Status Solidi A 5∕2015)
650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation
Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs: Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs
Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors
Schottky-on-heterojunction optoelectronic functional devices realized on AlGaN/GaN-on-Si platform
Investigation of gate degradation in Al2O3-AlGaN/GaN MIS-HEMTs using transparent gate electrode
A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs
Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes
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