Yunyou Lu
0000-0003-0951-8634
Hong Kong University of Science and Technology
27 papers found
Refreshing results…
Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques
High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation
600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Characterization ofVT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs: Characterization ofVT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs
1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform
Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies
High-Voltage Enhancement/Depletion-mode AlGaN/GaN HEMTs on Modified SOI Substrates
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