Published in
2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
DOI: 10.1109/ifws.2016.7803763
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Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET
Proceedings article published in 2016 by
Song Yang,
Zhikai Tang,
Yunyou Lu 
,
Qimeng Jiang,
Anping Zhang,
Kevin J. Chen
,
Qimeng Jiang,
Anping Zhang,
Kevin J. Chen
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