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Wiley, physica status solidi (a) – applications and materials science, 5(212), p. 1059-1065, 2014

DOI: 10.1002/pssa.201431712

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Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs: Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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