Published in
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
DOI: 10.1109/ispsd.2016.7520828
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Impact of Vth shift on Ron in E/D-mode GaN-on-Si power transistors: Role of dynamic stress and gate overdrive
Proceedings article published in 2016 by
Shu Yang,
Yunyou Lu 
,
Shenghou Liu,
Hanxing Wang,
Cheng Liu,
Kevin J. Chen
,
Shenghou Liu,
Hanxing Wang,
Cheng Liu,
Kevin J. Chen
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