Published in

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

DOI: 10.1109/iciprm.2016.7528768

Links

Tools

Export citation

Search in Google Scholar

Critical heterostructure design for low on-resistance normally-off double-channel MOS-HEMT

Proceedings article published in 2016 by Jin Wei ORCID, Shenghou Liu, Baikui Li, Xi Tang, Gaofei Tang, Zhaofu Zhang, Kevin J. Chen
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO