Published in

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

DOI: 10.23919/ispsd.2017.7988890

Links

Tools

Export citation

Search in Google Scholar

SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications

Proceedings article published in 2017 by Huaping Jiang, Jin Wei ORCID, Xiaoping Dai, Changwei Zheng, Maolong Ke, Xiaochuan Deng, Yogesh Sharma, Ian Deviny, Philip Mawby
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

Full text: Unavailable

Question mark in circle
Preprint: policy unknown
Upload
Question mark in circle
Postprint: policy unknown
Upload
Question mark in circle
Published version: policy unknown
Upload