Paul Hurley - Dissemin

All papers authored by Paul Hurley

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2021 Farzan Gity

, Fintan Meaney, Anya Curran

, Paul K. Hurley

, Stephen Fahy, Ray Duffy

, Lida Ansari

Doping of ultra-thin Si films: Combined first-principles calculations and experimental study

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2020 Francesca Urban

, Farzan Gity

, Paul K. Hurley

, Niall McEvoy

, Antonio Di Bartolomeo

Isotropic conduction and negative photoconduction in ultrathin PtSe2 films

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This paper is made freely available by the publisher.

Darragh Buckley, Saikumar Inguva, David McNulty

, Vitaly Z. Zubialevich, Peter Parbrook, Farzan Gity

, P. K. Hurley

, Colm O'Dwyer

Photoconductive Solution Processed ZnO Quasi-superlattice Films

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Lee Walsh, Lida Ansari

, Scott Monaghan, Kuanysh Zhussupbekov, Ainur Zhussupbekova, Cormac Ó. Coileáin, Niall McEvoy, Igor V. Shvets, Adam T. Barton, Christopher Hinkle, P. K. Hurley

, Farzan Gity

Transition Metal Doping of MoS2: A Correlated Experimental and Theoretical Study

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Farzan Gity

, P. K. Hurley

, Lida Ansari

Schottky-Junction TMD-Based Monomaterial Field-Effect Transistor

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Shubhadeep Bhattacharjee, Enrico Caruso, Niall McEvoy, Cormac Ó. Coileáain, Lida Ansari

, Roger Nagle, Karim Cherkaoui

, Farzan Gity

, P. K. Hurley

(Invited) Multi-Level Non-Volatile Memory in Au/Monolayer MoS2/Au Structures

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Agnieszka Gocalinska

, Andrea Pescaglini, Eleonora Secco, Enrica E. Mura, Kevin Thomas, Anya Curran, Farzan Gity

, Roger Nagle, Michael Schmidt, Paweł P. Michałowski

, Paul K. Hurley

, Ian Povey

, Emanuele Pelucchi

Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates

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2018 Peng Zhao

, Ava Khosravi

, Angelica Azcatl, Pavel Bolshakov

, Gioele Mirabelli

, Enrico Caruso

, Christopher L. Hinkle

, Paul K. Hurley

, Robert M. Wallace

, Chadwin D. Young

Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis

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Colm O'Dwyer

, Lee A. Walsh

, Farzan Gity

, Shubhadeep Bhattacharjee

, Paul K. Hurley

Two-Dimensional Materials and Their Role in Emerging Electronic and Photonic Devices

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2017 C. Byrne, B. Brennan

, R. Lundy, J. Bogan, A. Brady, Y. Y. Gomeniuk, S. Monaghan, P. K. Hurley

, G. Hughes

Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

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This paper is available in a repository.

Gabriel Greene-Diniz

, Kelin J. Kuhn, Paul K. Hurley

, James C. Greer

First principles modeling of defects in the Al2O3/In0.53Ga0.47As system

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É. O'Connor, K. Cherkaoui

, S. Monaghan

, B. Sheehan, I. M. Povey

, P. K. Hurley

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

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Peng Zhao, Angelica Azcatl, Pavel Bolshakov, Jiyoung Moon, Christopher L. Hinkle, Paul K. Hurley

, Robert M. Wallace, Chadwin D. Young

Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric

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2016 Gioele Mirabelli, Conor McGeough

, Michael Schmidt

, Eoin K. McCarthy

, Scott Monaghan, Ian M. Povey

, Melissa McCarthy, Farzan Gity

, Roger Nagle, Greg Hughes, Attilio Cafolla, Paul K. Hurley

, Ray Duffy

Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

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Olivia L. Hendricks, Andrew G. Scheuermann, Michael Schmidt, Paul K. Hurley

, Paul C. McIntyre, Christopher E. D. Chidsey

Isolating the photovoltaic junction: atomic layer deposited TiO2-RuO2 alloy Schottky contacts for silicon photoanodes

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Chadwin D. Young, Peng Zhao, Pavel Bolshakov-Barrett, Angelica Azcatl, P. K. Hurley

, Y. Y. Gomeniuk, Michael Schmidt, Christopher L. Hinkle, Robert M. Wallace

(Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric

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Peter F. Satterthwaite, Andrew G. Scheuermann, Paul K. Hurley

, Christopher E. D. Chidsey, Paul C. McIntyre

Engineering interfacial silicon dioxide for improved metal-insulator-semiconductor silicon photoanode water splitting performance

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Peng Zhao, Angelica Azcatl, Pavel Bolshakov-Barrett, Robert M. Wallace, Chadwin D. Young, Paul K. Hurley

Top-gated MoS2 capacitors and transistors with high-k dielectrics for interface study

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Gioele Mirabelli

, Michael Schmidt

, Brendan Sheehan, Karim Cherkaoui

, Scott Monaghan, Ian Povey, Melissa McCarthy, Alan P. Bell

, Roger Nagle, Felice Crupi, Paul K. Hurley

, Ray Duffy

Back-gated Nb-doped MoS2 junctionless field-effect-transistors

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All papers authored by Paul Hurley