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American Institute of Physics, Applied Physics Letters, 3(110), p. 032902

DOI: 10.1063/1.4973971

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Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

Journal article published in 2017 by É. O'Connor, K. Cherkaoui ORCID, S. Monaghan ORCID, B. Sheehan, I. M. Povey ORCID, P. K. Hurley ORCID
This paper is available in a repository.
This paper is available in a repository.

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