Published in
Elsevier, Materials Science in Semiconductor Processing, (63), p. 227-236
DOI: 10.1016/j.mssp.2017.02.024
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Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system
Journal article published in 2017 by
C. Byrne,
B. Brennan 
,
R. Lundy,
J. Bogan,
A. Brady,
Y. Y. Gomeniuk,
S. Monaghan,
P. K. Hurley ,
G. Hughes
,
R. Lundy,
J. Bogan,
A. Brady,
Y. Y. Gomeniuk,
S. Monaghan,
P. K. Hurley ,
G. Hughes
This paper was not found in any repository, but could be made available legally by the author.
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