Papers authored by Jian Fu Zhang
Refreshing results…
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Kean Hong Tok,
Rui Gao ,
Zhigang Ji ,
Weidong Zhang ,
John S. Marsland,
Thomas Chiarella ,
Jacopo Franco ,
Ben Kaczer ,
Dimitri Linten,
Jian Fu Zhang
A Pragmatic Model to Predict Future Device Aging
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Pedro Freitas ,
John Marsland,
Andrea Fantini,
Daniele Garbin ,
Ludovic Goux,
Gouri Sankar Kar,
Wei Shao ,
Weidong Zhang ,
James Brown,
Robin Degraeve,
Flora D. Salim ,
Sergiu Clima ,
Firas Hatem ,
Jian Fu Zhang
GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator
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Weidong Zhang ,
Pedro Freitas ,
Firas Hatem ,
Jian Fu Zhang ,
John Marsland,
Bogdan Govoreanu,
Ludovic Goux,
Gouri Sankar Kar,
Steve Hall ,
Paul Chalker ,
John Robertson
Download from researchonline.ljmu.ac.uk
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Wei Dong Zhang ,
Jian Fu Zhang ,
Zhigang Ji ,
Brahim Benbakhti ,
Bogdan Govoreanu,
Eddy Simoen ,
Ludovic Goux,
Attilio Belmonte,
Robin Degraeve,
Gouri Sankar Kar,
Malgorzata Jurczak
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Bogdan Govoreanu,
Jian Fu Zhang ,
Zhigang Ji ,
Malgorzata Jurczak
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Jian Fu Zhang ,
Brahim Benbakhti ,
Zhigang Ji,
Jerome Mitard,
Hiroaki Arimura
Download from researchonline.ljmu.ac.uk
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Zhigang Ji,
Wei Dong Zhang ,
David Vigar,
Asen Asenov,
Louis Gerrer,
Vikas Chandra,
Rob Aitken,
Ben Kaczer
Download from eprints.gla.ac.uk
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B. Govoreanu,
E. Simoen,
J. F. Zhang ,
Z. Ji,
R. Gao,
G. Groeseneken,
M. Jurczak
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R. Wang,
M. Duan,
W. Zhang ,
J. Franco,
S. Sioncke,
D. Cott,
J. Mitard,
L. Witters,
H. Mertens,
B. Kaczer
and 6 other authors
Understanding charge traps for optimizing Si-passivated Ge nMOSFETs
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M. Duan,
Z. Ji,
W. Zhang
Defects for Random Telegraph Noise and Negative Bias Temperature Instability
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Z. Ji,
B. Benbakhti,
G. Groeseneken,
M. Jurczak
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Meng Duan,
Zhigang Ji,
Wei Dong Zhang ,
Ben Kaczer,
Tom Schram,
Naoto Horiguchi,
Guido Groeseneken
Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation
Download from dx.doi.org
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A. Manut,
Z. Ji,
W. Zhang ,
A. Asenov,
L. Gerrer,
D. Reid,
H. Razaidi,
D. Vigar,
V. Chandra,
R. Aitken,
B. Kaczer,
G. Groeseneken
Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
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Meng Duan,
Zhigang Ji,
Weidong Zhang
NBTI prediction and its induced time dependent variation
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Wei Dong Zhang ,
Ben Kaczer,
Alireza Alian,
Dimitri Linten,
Daisy Zhou,
Nadine Collaert,
Stefan De Gendt,
Guido Groeseneken
An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel
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Wd Zhang ,
Sfwm Hatta,
Sharifah F. Wan Muhamad Hatta,
James Niblock,
Peter Bachmayr,
Lee Stauffer,
Katie Wright,
Steve Greer
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L. Lin,
M. Duan,
Wd Zhang ,
X. Zhang,
R. Gao,
B. Kaczer,
J. Franco,
T. Schram,
N. Horiguchi,
S. De Gendt,
G. Groeseneken
A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
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Jf F. Zhang ,
Z. Ji,
B. Benbakhti,
J. Franco,
J. Mitard,
L. Witters,
N. Collaert,
G. Groeseneken
AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction
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