Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 11(62), p. 3633-3639, 2015
Links
Tools
An Investigation on Border Traps in III–V MOSFETs With an In<sub>0.53</sub>Ga<sub>0.47</sub>As Channel
Journal article published in 2015 by
Zhigang Ji,
Xiong Zhang,
Jacopo Franco,
Rui Gao,
Meng Duan,
Jian Fu Zhang 
,
Wei Dong Zhang ,
Ben Kaczer,
Alireza Alian,
Dimitri Linten,
Daisy Zhou,
Nadine Collaert,
Stefan De Gendt,
Guido Groeseneken
,
Wei Dong Zhang ,
Ben Kaczer,
Alireza Alian,
Dimitri Linten,
Daisy Zhou,
Nadine Collaert,
Stefan De Gendt,
Guido Groeseneken
This paper is available in a repository.
Full text: Download
Published version:
archiving forbidden
Data provided by 