Jian Fu Zhang - Dissemin

Papers authored by Jian Fu Zhang

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2013 Sharifah Wan Muhamad Hatta, Zhigang Ji, Jian Fu Zhang

, Meng Duan, Wei Dong Zhang

, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken

Energy Distribution of Positive Charges in Gate Dielectric: Probing Technique and Impacts of Different Defects

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M. Duan, J. F. Zhang

, Z. Ji, W. Zhang

Defect Losses under Different Processes, Stress, Recovery, and Anneal Conditions

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Z. Ji, J. Gillbert, J. F. Zhang

, W. Zhang

, Ieee

A new Ultra-Fast Single Pulse technique (UFSP) for channel effective mobility evaluation in MOSFETs

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2012 B. Benbakhti, J. F. Zhang

, Z. Ji, W. Zhang

, J. Mitard, B. Kaczer, G. Groeseneken, S. Hall, J. Robertson, P. Chalker

Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

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W. D. Zhang, C. Robinson, X. F. Zheng, J. F. Zhang

, Ta Tang, Yl Jiang

Characterisation of electron traps in high-k dielectric stacks for Flash memory applications using fast pulse techniques

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J. F. Zhang

, Z. Ji, M. Duan, W. Zhang

, Ta Tang, Yl Jiang

Development of new characterisation technique for interface states beyond bandgap

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Z. Ji, J. F. Zhang

, W. Zhang

A New Mobility Extraction Technique Based on Simultaneous Ultrafast $I_{d}$–$V_{g}$ and $C_{\rm cg}$– $V_{g}$ Measurements in MOSFETs

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W. J. Liu, X. W. Sun

, X. A. Tran, Z. Fang, Z. R. Wang, F. Wang, L. Wu, J. F. Zhang

, J. Wei, H. L. Zhu, H. Y. Yu

$V_{\rm th}$ Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection

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This paper is available in a repository.

M. Duan, J. F. Zhang

, Z. Ji, W. Zhang

, B. Kaczer, S. De Gendt, G. Groeseneken

Defect loss: A new concept for reliability of MOSFETs

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W. J. Liu, X. W. Sun

, Z. Fang, Z. R. Wang, X. A. Tran, F. Wang, L. Wu, G. I. Ng, J. F. Zhang

, J. Wei, H. L. Zhu, H. Y. Yu

Positive Bias-Induced $V_{\rm th}$ Instability in Graphene Field Effect Transistors

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Zhigang Ji, Jian Fu Zhang

, Wei Dong Zhang

, Ben Kaczer, Stefan De Gendt, Guido Groeseneken

Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

2011 Bj Tang, Wd Zhang, Jf Zhang

, G. Van den Bosch, B. Govoreanu, J. Van Houdt

Abnormal V-TH/V-FB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations

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This paper is made freely available by the publisher.

Lin Lin, Zhigang Ji, J. Zhang

, Weidong Zhang

Development of a Fast Technique for Characterizing Interface States

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2010 S. F. Wan Muhamad Hatta, N. Soin, D. Abd Hadi, J. F. Zhang

NBTI degradation effect on advanced-process 45nm high-k PMOSFETs with geometric and process variations

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Zhigang Ji, L. Lin, Jian Fu Zhang

, Ben Kaczer, Guido Groeseneken

NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse Measurement

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Xue Feng Zheng, Wei Dong Zhang

, Bogdan Govoreanu, Daniel Ruiz Aguado, Daniel Ruiz Aguado, Jian Fu Zhang

, Jan Van Houdt

Energy and Spatial Distributions of Electron Traps Throughout $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stacks as the IPD in Flash Memory Application

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2009 Z. Ji, S. de Gendt, J. F. Zhang

, W. Zhang

, G. Groeseneken, L. Pantisano, M. M. Heyns

An assessment of the mobility degradation induced by remote charge scattering

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X. F. Zheng, W. D. Zhang

, B. Govoreanu, J. F. Zhang

, J. Van Houdt

Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells

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J. F. Zhang

Defects and instabilities in Hf-dielectric/SiON stacks (Invited Paper)

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Zhigang Ji, Jian Fu Zhang

, Mo Huai Chang, Ben Kaczer, Guido Groeseneken

An Analysis of the NBTI-Induced Threshold Voltage Shift Evaluated by Different Techniques

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Papers authored by Jian Fu Zhang