SangHyeon Kim
0000-0002-2517-4408
11 papers found
Refreshing results…
Comparative advantages of a type-II superlattice barrier over an AlGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors
3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks
Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode
Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on-Insulator n-MOSFETs
Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel
Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III–V Templates
Verification of Ge-on-insulator structure for a mid-infrared photonics platform
Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques
Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors
Low-Subthreshold-Slope Asymmetric Double-Gate GaAs-on-Insulator Field-Effect-Transistors on Si
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