Published in
American Institute of Physics, Applied Physics Letters, 14(115), p. 143502, 2019
DOI: 10.1063/1.5111377
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Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode
Journal article published in 2019 by
Seong Kwang Kim,
Dae-Myeong Geum,
Hyeong-Rak Lim,
Hansung Kim 
,
Jae-Hoon Han,
Do Kyung Hwang ,
Jin Dong Song,
Hyung-Jun Kim ,
Sanghyeon Kim
,
Jae-Hoon Han,
Do Kyung Hwang ,
Jin Dong Song,
Hyung-Jun Kim ,
Sanghyeon Kim
This paper was not found in any repository, but could be made available legally by the author.
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