Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 5(65), p. 1862-1868
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Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel
Journal article published in 2018 by
Seong Kwang Kim,
Jae-Phil Shim 
,
Dae-Myeong Geum,
Jaewon Kim,
Chang Zoo Kim,
Han-Sung Kim ,
Jin Dong Song,
Sung-Jin Choi ,
Dae Hwan Kim ,
Won Jun Choi,
Hyung-Jun Kim,
Dong Myong Kim ,
Sanghyeon Kim
,
Dae-Myeong Geum,
Jaewon Kim,
Chang Zoo Kim,
Han-Sung Kim ,
Jin Dong Song,
Sung-Jin Choi ,
Dae Hwan Kim ,
Won Jun Choi,
Hyung-Jun Kim,
Dong Myong Kim ,
Sanghyeon Kim
This paper was not found in any repository, but could be made available legally by the author.
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