MinHan Mi
0000-0003-4435-839X
5 papers found
Refreshing results…
Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates
High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure
8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer
Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs
Improving the transconductance flatness of InAlN/GaN HEMT by modulating VT along the gate width
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