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American Institute of Physics, Applied Physics Letters, 5(120), p. 052101, 2022

DOI: 10.1063/5.0080120

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8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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