Bin Hou
0000-0002-5368-3699
5 papers found
Refreshing results…
Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates
8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer
High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application
Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si
Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures
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