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American Institute of Physics, Applied Physics Letters, 6(120), p. 062104, 2022

DOI: 10.1063/5.0079359

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High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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