Gang
0000-0002-1842-3891
Hong Kong University of Science and Technology
3 papers found
Refreshing results…
Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs
Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices
A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
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