Byung Park
0000-0002-2962-2458
17 papers found
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Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications
Effect of Nitrogen Content in Tunneling Dielectric on Cell Properties of 3-D NAND Flash Cells
Reconfigurable Field-Effect Transistor as a Synaptic Device for XNOR Binary Neural Network
Si-Based FET-Type Synaptic Device With Short-Term and Long-Term Plasticity Using High- $κ$ Gate-Stack
Adaptive Weight Quantization Method for Nonlinear Synaptic Devices
3-D Stacked Synapse Array Based on Charge-Trap Flash Memory for Implementation of Deep Neural Networks
Vertical-Structured Electron-Hole Bilayer Tunnel Field-Effect Transistor for Extremely Low-Power Operation With High Scalability
Spiking Neural Network Using Synaptic Transistors and Neuron Circuits for Pattern Recognition With Noisy Images
Design and Electrical Characterization of 2-T Thyristor RAM With Low Power Consumption
High-Density and Near-Linear Synaptic Device Based on a Reconfigurable Gated Schottky Diode
Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x
Analysis of Clockwise and Counter-Clockwise Hysteresis Characteristics in 3-D NAND Flash Memory Cells
High-Density Reconfigurable Devices With Programmable Bottom-Gate Array
Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures
GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency
Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device
The Effect of Drain Bias Stress on the Instability of Turned-OFF Amorphous HfInZnO Thin-Film Transistors Under Light Irradiation
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