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Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 5(65), p. 2010-2015, 2018

DOI: 10.1109/ted.2018.2817569

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Vertical-Structured Electron-Hole Bilayer Tunnel Field-Effect Transistor for Extremely Low-Power Operation With High Scalability

Journal article published in 2018 by Sangwan Kim ORCID, Woo Young Choi ORCID, Byung-Gook Park ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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