Sungjun Kim - Dissemin

All papers authored by Sungjun Kim

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2024 Sung Jin Yang

, Liangbo Liang

, Yoonseok Lee, Yuqian Gu

, Jameela Fatheema, Shanmukh Kutagulla

, Dahyeon Kim, Myungsoo Kim

, Sungjun Kim

, Deji Akinwande

Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

2020 Jinju Lee, Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Chandreswar Mahata, Eunjin Sim, Muhammad Ismail, Yawar Abbas

, Haider Abbas

, Dong Keun Lee, Min-Hwi Kim, Yoon Kim, Changhwan Choi

, Byung-Gook Park, Sungjun Kim

Synaptic Characteristics of Amorphous Boron Nitride–based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

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2018 Muhammad Ismail, Aize Hao

, Wenhua Huang, Jinju Lee, Sungjun Kim

, Dinghua Bao

Coexistence of unipolar and bipolar switching in nanocrystalline spinel ferrite ZnFe2O4 thin films synthesized by sol-gel method

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Sungjun Kim

, Sunghun Jung, Min-Hwi Kim, Ying-Chen Chen, Yao-Feng Chang, Kyung-Chang Ryoo, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

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Ying-Chen Chen

, Szu-Tung Hu, Chih-Yang Lin, Burt Fowler, Hui-Chun Huang, Chao-Cheng Lin, Sungjun Kim

, Yao-Feng Chang

, Jack C. Lee

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

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2017 Sungjun Kim

, Yao-Feng Chang

, Min-Hwi Kim, Byung-Gook Park

Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

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Sungjun Kim

, Yao-Feng Chang

, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen

, Jong-Ho Lee, Byung-Gook Park

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

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2016 Sungjun Kim

, Min-Hwi Kim, Tae-Hyeon Kim, Seongjae Cho, Byung-Gook Park

Dopant concentration dependent resistive switching characteristics in Cu/SiN x /Si structure

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Sungjun Kim

, Byung-Gook Park

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

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2015 Sungjun Kim

, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

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All papers authored by Sungjun Kim