Haider Abbas
www.mendeley.com
0000-0003-4372-2639
Hanyang University
15 papers found
Refreshing results…
Synaptic Characteristics of Amorphous Boron Nitride–based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering
The coexistence of threshold and memory switching characteristics of ALD HfO2 memristor synaptic arrays for energy-efficient neuromorphic computing
Forming-free resistive switching characteristics in manganese oxide and hafnium oxide devices
Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices
Forming-free resistive switching characteristics of manganese oxide and cerium oxide bilayers with crossbar array structure
Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices
Resistive switching characteristics of Ag/MnO/CeO 2 /Pt heterostructures memory devices
Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure
Resistive Switching Characteristics of Tantalum Oxide and Titanium Oxide Heterojunction Devices
A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications
The forming-free bipolar resistive switching characteristics of Ag2Se thin film
Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices
Resistive switching characteristics in manganese oxide and tantalum oxide devices
Resistive Switching Characteristics of Tantalum Oxide with Different Top Electrodes
Resistive Switching Characteristics of Ta2O5 Thin Film and Maghemite Nanoparticles Assembly Hybrid Device
Missing publications? Search for publications with a matching author name.