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Understanding charge traps for optimizing Si-passivated Ge nMOSFETs
Download from researchonline.ljmu.ac.ukDefects for Random Telegraph Noise and Negative Bias Temperature Instability
Download from researchonline.ljmu.ac.ukImpact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation
Download from dx.doi.orgHot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
Download from www.researchgate.netNBTI prediction and its induced time dependent variation
Download from researchonline.ljmu.ac.ukAn Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel
Download from researchonline.ljmu.ac.ukA test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Download from researchonline.ljmu.ac.ukAC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction
Download from researchonline.ljmu.ac.ukESD Characterization of planar InGaAs devices
Download from researchonline.ljmu.ac.ukNBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction
Download from researchonline.ljmu.ac.ukEnergy distribution of positive charges in high-k dielectric
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