Published in
2014 IEEE International Electron Devices Meeting
DOI: 10.1109/iedm.2014.7047166
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NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction
Proceedings article published in 2014 by
J. Ma,
W. Zhang 
,
J. F. Zhang ,
B. Benbakhti,
Z. Ji,
J. Mitard,
J. Franco,
B. Kaczer,
G. Groeseneken
,
J. F. Zhang ,
B. Benbakhti,
Z. Ji,
J. Mitard,
J. Franco,
B. Kaczer,
G. Groeseneken
This paper is available in a repository.
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