David Storm
0000-0003-4317-6180
6 papers found
Refreshing results…
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire
Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
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