Paul Berger
www2.ece.ohio-state.edu
0000-0002-2656-2349
Ohio State University
5 papers found
Refreshing results…
Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire
Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
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