All papers authored by V. P. Markevich
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Vladimir P. Markevich ,
Anthony R. Peaker
Characterisation of negative-U defects in semiconductors
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Michelle Vaqueiro-Contreras,
Joyce T. De Guzman,
José Coutinho ,
Paulo Santos,
Iain F. Crowe,
Matthew P. Halsall,
Ian Hawkins,
Stanislau B. Lastovskii,
Leonid I. Murin,
Anthony R. Peaker
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Vladimir P. Markevich ,
José Coutinho ,
Paulo Santos ,
Iain F. Crowe ,
Matthew P. Halsall ,
Ian Hawkins,
Stanislau B. Lastovskii,
Leonid I. Murin,
Anthony R. Peaker
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Peaker,A R.,
V. P. Markevich ,
Markevich,V P.,
Coutinho,J,
José Coutinho
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
Download from www.research.manchester.ac.uk
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Vladimir P. Markevich ,
Matthew P. Halsall,
Anthony R. Peaker
Vanadium in silicon: Lattice positions and electronic properties
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V. P. Markevich ,
A. R. Peaker,
B. Hamilton,
J. D. Murphy
Evidence for an iron-hydrogen complex in p-type silicon
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A. R. Peaker B Hamilton S B. Lastovskii and L. I. Murin V. P. Markevich,
ARa R. Peaker,
B. A. Hamilton,
SBb B. Lastovskii,
LIb I. Murin
Donor levels of the divacancy-oxygen defect in silicon
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ARa R. Peaker,
B. A. Hamilton,
AGb G. Marinopoulos,
J. B. Coutinho
Titanium in silicon: Lattice positions and electronic properties
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Anthony R. Peaker,
Bengt G. Svensson Vladimir P. Markevich Anthony R. Peaker Leonid I. Murin
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Anthony R. Peaker Bruce Hamilton S B. Lastovskii Leonid I. Murin Jose Coutinho Mark J. Rayson Patrick R. Briddon Bengt G. Svensson Vladimir P. Markevich,
ARa Peaker,
Bruce A. Hamilton,
SBb B. Lastovskii,
LIb Murin,
Jose C. Coutinho ,
MJd Rayson,
PRe Briddon,
BGf Svensson
The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon
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V. P. Markevich ,
B. G. Svensson,
E. V. Monakhov
Divacancy-iron complexes in silicon
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N. C. Iwamoto,
S. D. Sasaki,
T. C. Ohshima,
K. E. Kojima,
T. D. Kimoto,
K. A. Uchida,
S. A. Nozaki,
B. B. Hamilton,
ARb R. Peaker,
V. P. Markevich N Iwamoto S Sasaki T Ohshima K Kojima T Kimoto K Uchida S Nozaki B Hamilton and A. R. Peaker A. Koizumi
E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy
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A. R. Peaker,
B. Hamilton
Passivation of titanium by hydrogen in silicon
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B. Hamilton,
G. Parada,
A. Dudas,
A. Pap,
E. Don,
B. Lim,
J. Schmidt,
L. Yu,
Y. Yoon,
G. Rozgonyi,
V. P. Markevich B Hamilton G Parada A Dudas A Pap E Don B Lim J Schmidt L Yu Y Yoon and G. Rozgonyi A. R. Peaker
Recombination via point defects and their complexes in solar silicon
Download from onlinelibrary.wiley.com
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M. J. Rayson,
B. G. Svensson,
A. R. Peaker,
B. Hamilton,
S. B. Lastovskii,
L. I. Murin,
J. Coutinho ,
A. V. Markevich,
P. R. Briddon,
A. L. Et
Reconfigurations and diffusion of trivacancy in silicon
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I. D. Hawkins,
B. Hamilton,
K. Bonde Nielsen,
K. Gościński
Laplace deep level transient spectroscopy: Embodiment and evolution
Download from www.escholar.manchester.ac.uk
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S. B. Lastovskii
Formation and annealing of radiation defects in tin-doped p-type germanium crystals
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B. J. Svensson,
V. P. Markevich ,
A. R. Peaker,
B. Hamilton,
S. B. Lastovskii,
L. I. Murin,
B. G. Svensson,
Mark J. Rayson,
P. R. Briddon,
V. P. Markevich A R. Peaker B Hamilton S B. Lastovskii L I. Murin B J. Svensson M J. Rayson and P. R. Briddon J. Coutinho
Electronic and dynamical properties of the silicon trivacancy
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