V. P. Markevich - Dissemin

Papers authored by V. P. Markevich

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2007 F. P. Korshunov, V. P. Markevich

, L. I. Murin, S. B. Lastovsky, Y.-U. V. Bogatyrev, N. V. Abrosimov

Influence of electron irradiation on characteristics of Si1−xGex p–n-structures

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P. Kruszewski, A. Mesli, L. Dobaczewski, N. V. Abrosimov, V. P. Markevich

, A. R. Peaker

Iron-aluminium pair reconfiguration processes in SiGe alloys

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Vladimir Markevich

, R. Peaker Anthony, Arne Nylandsted Larsen

Radiation Performance of Ge Technologies

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P. Kruszewski, L. Dobaczewski, V. P. Markevich

, C. Mitchell, M. Missous, A. R. Peaker

Electron- and hole-related electrical activity of InAs/GaAs quantum dots

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2006 A. Carvalho, R. Jones, V. J. B. Torres, J. Coutinho

, V. Markevich

, Sven Öberg, P. R. Briddon

Oxygen defects in irradiated germanium

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L. I. Murin, V. P. Markevich

, I. F. Medvedeva, L. Dobaczewski

Bistability and electrical activity of the vacancy-dioxygen complex in silicon

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V. V. Litvinov, L. I. Murin, V. P. Markevich

, A. R. Peaker, J. L. Lindström

Oxygen loss and thermal double donor formation in germanium

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J.-U. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich

, N. M. Kazuchits

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V. P. Markevich

, A. R. Peaker, A. V. Markevich

, V. V. Litvinov, L. I. Murin, V. V. Emtsev

Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals

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I. Kovačević, B. Pivac, R. Jac˘imović, M. K. Khan, V. P. Markevich

, A. R. Peaker

Defects induced by irradiation with fast neutrons in n-type germanium

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L. I. Khirunenko, Y.-U. V. Pomozov, M. G. Sosnin, M. O. Trypachko, A. V. Duvanskii, N. V. Abrosimov, H. Riemann, S. B. Lastovskii, L. I. Murin, V. P. Markevich

, A. R. Peaker

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V. V. Litvinov, B. G. Svensson, L. I. Murin, J. L. Lindström, V. P. Markevich

, A. R. Peaker

Determination of interstitial oxygen concentration in germanium by infrared absorption

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V. P. Markevich

A comparative study of ion implantation and irradiation-induced defects in Ge crystals

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V. P. Markevich

, A. R. Peaker, V. V. Litvinov, L. I. Murin, N. V. Abrosimov

Electric field enhancement of electron emission from deep level traps in Ge crystals

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F. D. (Francois Danie) Auret, A. R. Peaker, V. P. Markevich

, L. Dobaczewski, R. M. Gwilliam

High-resolution DLTS of vacancy–donor pairs in P-, As- and Sb-doped silicon

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V. P. Markevich

, A. R. Peaker, V. V. Emtsev, V. V. Litvinov, L. I. Murin

Vacancy defect reactions associated with oxygen and bismuth in irradiated germanium

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A. V. Markevich

, V. V. Litvinov, V. V. Emtsev, V. P. Markevich

, A. R. Peaker

Phonon-assisted changes in charge states of deep level defects in germanium

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J. Tan, G. Davies, S. Hayama, V. P. Markevich

The different behaviour of CiOi and CiCs defects in SiGe

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L. I. Murin, J. Lennart Lindström, G. Davies, V. P. Markevich

Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

A. R. Peaker, A. Satta, V. P. Markevich

, E. Simoen, B. Hamilton

Germanium... the semiconductor of tomorrow?

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Papers authored by V. P. Markevich