Papers authored by Benjamin Damilano
Refreshing results…
2007
G. Sarusi,
O. Moshe,
S. Khatsevich,
D. H. Rich,
B. Damilano 
Microcrack-induced strain relief in Ga N ∕ Al N quantum dots grown on Si(111)
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Maxime Hugues,
Mirja Richter,
Jean-Michel Chauveau,
Benjamin Damilano ,
Jean-Yves Duboz,
Jean Massies,
Thierry Taliercio,
Pierre Lefebvre,
Thierry Guillet ,
Pierre Valvin,
Thierry Bretagnon,
Bernard Gil,
Andreas D. Wieck
,
Jean-Yves Duboz,
Jean Massies,
Thierry Taliercio,
Pierre Lefebvre,
Thierry Guillet ,
Pierre Valvin,
Thierry Bretagnon,
Bernard Gil,
Andreas D. Wieck
Investigation of non-radiative processes in InAs/(Ga,In)(N,As) quantum dots
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R. Bardoux,
T. Bretagnon,
T. Guillet ,
P. Lefebvre,
T. Taliercio,
P. Valvin,
B. Gil,
N. Grandjean,
B. Damilano ,
A. Dussaigne,
J. Massies
,
P. Lefebvre,
T. Taliercio,
P. Valvin,
B. Gil,
N. Grandjean,
B. Damilano ,
A. Dussaigne,
J. Massies
Radiative lifetime in wurtzite GaN/AlN quantum dots
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Mirja Richter,
Maxime Hugues,
Benjamin Damilano ,
Jean Massies,
Jean-Yves Duboz,
Dirk Reuter,
Andreas D. Wieck
,
Jean Massies,
Jean-Yves Duboz,
Dirk Reuter,
Andreas D. Wieck
1.5 µm luminescence from InAs/GaxIn1–xNyAs1–y quantum dots grown on GaAs substrate
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L. Hirsch,
P. Tardy,
G. Wantz,
N. Huby,
P. Moretto,
L. Serani,
F. Natali,
B. Damilano ,
J. Y. Duboz,
J. L. Reverchon
,
J. Y. Duboz,
J. L. Reverchon
Light-ion beam for microelectronic applications
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F. Natali,
D. Byrne,
M. Leroux,
B. Damilano ,
F. Semond,
A. Le Louarn,
S. Vezian,
N. Grandjean,
J. Massies
,
F. Semond,
A. Le Louarn,
S. Vezian,
N. Grandjean,
J. Massies
Inhomogeneous broadening ofAlxGa1−xN∕GaNquantum wells
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