Papers authored by Benjamin Damilano
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Yaroslav Zhydachevskii,
Michael Kunzer,
Katarzyna Holc,
Ulrich T. Schwarz
GaN doped with beryllium---An effective light converter for white light emitting diodes
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F. Semond,
O. Tottereau,
P. Vennéguès
Imaging and counting threading dislocations in c-oriented epitaxial GaN layers
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F. Demangeot,
L. Durand,
A. Ponchet,
M. J. Rashid,
F. Semond,
Y. Cordier
Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate
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Yvon Cordier ,
Fabrice Semond,
Claire Meyer
Role of magnetic polarons in ferromagnetic GdN
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Jean Massies
Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)
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P. De Mierry,
Loic Bodiou,
L. Nguyen,
Philippe Vennéguès,
Jean-Michel Chauveau,
Yvon Cordier ,
Jean-Yves Duboz,
Ragh Charash,
Agam Vajpeyi,
J.-M. Lamy,
Mahbub Akhter
and 4 other authors
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J. Massies
Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)
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P. Demolon,
J. Brault,
T. Huault,
F. Natali,
J. Massies
Blue-Green and White Color Tuning of Monolithic Light Emitting Diodes
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J.-C. Moreno,
N. Baron,
E. Frayssinet,
J.-M. Chauveau,
M. Nemoz,
S. Chenot,
B. Damilano ,
F. Semond
Growth of GaN based structures on Si(110) by molecular beam epitaxy
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J. Massies
External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes
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