Benjamin Damilano

Papers authored by Benjamin Damilano

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2010 Benjamin Damilano

, Thomas Huault, Julien Brault, Denis Lefebvre, Jean Massies

Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

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M. Peres, A. J. Neves, T. Monteiro, S. Magalhães, N. Franco, K. Lorenz, E. Alves, B. Damilano

, J. Massies, A. Dussaigne, N. Grandjean

Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice

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O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano

, J. Massies

Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

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O. Moshe, D. H. Rich, B. Damilano

, J. Massies

Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses

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2009 M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano

, J. Massies

Electroluminescence analysis of 1.3-1.5 μm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers

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Ofer Moshe, Daniel H. Rich, Benjamin Damilano

, Jean Massies

Perturbing GaN/AlN quantum dots with uniaxial stressors

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J. Brault, T. Huault, F. Natali, B. Damilano

, D. Lefebvre, M. Leroux, M. Korytov, J. Massies

Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range

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F. Natali, Y. Cordier

, J. Massies, S. Vezian, B. Damilano

, M. Leroux

Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells

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Y. Cordier

, J.-C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano

, F. Semond

AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

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Jean-Yves Duboz, Maxime Hugues, Benjamin Damilano

, Alexandru Nedelcu, Philippe Bois, Nasrin Kheirodin, François H. Julien

Infrared detectors based on InGaAsN∕GaAs intersubband transitions

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2008 Benjamin Damilano

, Franck Natali, Julien Brault, Thomas Huault, Denis Lefebvre, Rabih Tauk, Eric Frayssinet, Jean-Christophe Moreno, Yvon Cordier

, Fabrice Semond, Sébastien Chenot, Jean Massies

Blue (Ga,In)N/GaN light emitting diodes on Si(110) substrate

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Yvon Cordier

, Jean-Christophe Moreno, Nicolas Baron, Eric Frayssinet, SÉbastien Chenot, Benjamin Damilano

, Fabrice Semond

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

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Miguel Montes Bajo, Adrián Hierro Cano, José María Ulloa Herrero, Alvaro de Guzmán Fernández González, A. Guzmán, B. Damilano

, M. Hugues, M. Al Khalfiou, Jean-Yves Duboz, J. Massies

Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

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O. Moshe, D. H. Rich, B. Damilano

, J. Massies

Effect of uniaxial stress on the polarization of light emitted from Ga N ∕ Al N quantum dots grown on Si(111)

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M. Hugues, B. Damilano

, M. Al Khalfioui, J.-Y. Duboz, J. Massies, M. Richter, A. D. Wieck

Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots

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T. Huault, J. Brault, F. Natali, B. Damilano

, D. Lefebvre, L. Nguyen, M. Leroux, J. Massies

Blue-light emission from GaN∕Al0.5Ga0.5N quantum dots

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B. Damilano

, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, J. Massies

Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

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A. Dussaigne, B. Damilano

, J. Brault, J. Massies, E. Feltin, N. Grandjean

High doping level in Mg-doped GaN layers grown at low temperature

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2007 T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano

, M. Hugues, J. Massies, J. Y. Duboz

Annealing effects on InGaAsN/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k−p calculations

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M. Hugues, B. Damilano

, J.-Y. Duboz, J. Massies

Exciton dissociation and hole escape in the thermal photoluminescence quenching of(Ga,In)(N,As)quantum wells

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Papers authored by Benjamin Damilano