Enrique Miranda - Dissemin

Papers authored by Enrique Miranda

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2012 Enrique Miranda

, David Jiménez

, Jordi Suñé, Eamon O'Connor, Scott Monaghan, Ian Povey, Karim Cherkaoui, Paul Kennedy Hurley

Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors

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E. Miranda

, D. Jimenez

, J. Sune

The Quantum Point-Contact Memristor

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J. Sune, S. Long, C. Cagli, L. Perniola, X. Lian, X. Cartoixa, R. Rurali, E. Miranda

, D. Jimenez

, M. Liu

Electrical evidence of atomic-size effects in the conduction filament of RRAM

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This paper is made freely available by the publisher.

Xavier Saura, Enrique Miranda

, David Jimenez

, Shibing Long, Ming Liu, L. Ming, Joan Marc Rafi, Francesca Campabadal, Jordi Sune

Threshold switching and conductance quantization in Al/HfO2/Si(p) structures

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E. Miranda

, T. Kawanago, K. Kakushima, J. Suñé, H. Iwai

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown

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C. P. Quinteros, F. Palumbo, F. Campabadal, E. Miranda

Stress Conditions to Study the Reliability Characteristics of High-k Nanolaminates

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F. Palumbo, E. Miranda

, G. Ghibaudo, V. Jousseaume

Formation and Characterization of Filamentary Current Paths in $\hbox{HfO}_{2}$-Based Resistive Switching Structures

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E. Miranda

, D. Jimenez

, J. Sune, E. O'Connor, S. Monaghan, K. Cherkaoui, P. K. Hurley

Spatial statistics for micro/nanoelectronics and materials science

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E. Miranda

, D. Jimenez

, J. Sune

From post-breakdown conduction to resistive switching effect in thin dielectric films

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E. Miranda

, C. Garzon, C. S. Martínez Cisneros, J. Alonso, J. Garcia Garcia

Detection and characterization of the spatial inhibition potential in electroperforated sheet materials

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Xiaojuan Lian, Shibing Long, Carlo Cagli, Julien Buckley, Enrique Miranda

, Ming Liu, Jordi Sune

Quantum point contact model of filamentary conduction in resistive switching memories

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E. Miranda

, J. Sune, S. Kano, C. Dou, K. Kakushima, H. Iwai

Electron transport in CeOx-based resistive switching devices

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E. Miranda

, J. Sune, C. Mahata, T. Das, C. K. Maiti

Study of the spatial distribution of breakdown spots in MOS devices in case of important edge effect anomalies

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C. Mahata, S. Mallik, T. Das, C. K. Maiti, G. K. Dalapati, C. C. Tan, C. K. Chia, H. Gao, M. K. Kumar, S. Y. Chiam, H. R. Tan, H. L. Seng, D. Z. Chi, E. Miranda

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

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M. Lanza, G. Bersuker, M. Porti, E. Miranda

, M. Nafría, X. Aymerich

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

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E. Miranda

, C. Mahata, T. Das, J. Suñé, C. K. Maiti

Degradation and breakdown characteristics of Al/HfYOx/GaAs capacitors

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E. Miranda

, J. Suñé, T. Das, C. Mahata, C. K. Maiti

Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO2/Al2O3 nanolaminates on GaAs

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E. Miranda

, S. Kano, C. Dou, K. Kakushima, J. Suñé, H. Iwai

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

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Shin-Ichi Kano, Chunmeng Dou, Mokhammad S. Hadi, Kuniyuki Kakushima, Parhat Ahmet, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Enrique A. Miranda

, Takeo Hattori, Hiroshi Iwai

Influence of electrode materials on CeOx based resistive switching

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2011 Jordi Sune, Enrique Miranda

, David Jimenez

, Shibing Long, Ming Liu

From dielectric failure to memory function: Learning from oxide breakdown for improved understanding of resistive switching memories

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Papers authored by Enrique Miranda