Enrique Miranda
Universitat Autònoma de Barcelona
222 papers found
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Logistic modeling of progressive breakdown in ultrathin gate oxides
Download from www.researchgate.netTemperature Dependence of the Hard Breakdown Current of MOS Capacitors
Download from www.researchgate.netTwo-step stress methodology for monitoring the gate oxide degradation in MOS devices
Download from www.researchgate.netBreakdown and anti-breakdown events in high-field stressed ultrathin gate oxides
Download from www.researchgate.netLinear and non-linear conduction regimes in broken down gate oxides
Download from www.researchgate.netPost-radiation-induced soft breakdown conduction properties as a function of temperature
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