Paolo Pavan
0000-0001-5420-1797
135 papers found
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Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's
Improving the reliability and safety of automotive electronics
Hot-electron electroluminescence in AlGaAs/GaAs heterojunction bipolar transistors
A compact method for measuring parasitic resistances in bipolar transistors
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT's by means of a nonlocal analytical model for the avalanche multiplication factor
Explanation of current crowding phenomena induced by impact ionization in advanced Si bipolar transistors by means of electrical measurements and light emission microscopy
Impact ionization phenomena in AlGaAs/GaAs HBTs
Negative base current and impact ionization phenomena in AlGaAs/GaAs HBTs
A study of ESD- induced defects in high-voltage nMOS and pMOS transistors
Transiently triggered latch-up in cmos twin-tub and epitaxial technologies
Measurements of avalanche effects and light emission in advanced Si and SiGe bipolar transistors
Analysis of d.c. and a.c. anomalous latch-up effects in commercial CMOS integrated circuits
Latch-up DC triggering and holding characteristics of n-well, twin-tub and epitaxial CMOS technologies
Analysis of charge storage in the base of bipolar transistors and its influence on the parasitic resistance adopting an eight terminal Kelvin test structure
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