Paolo Pavan - Dissemin

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Papers authored by Paolo Pavan

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2006 A. Padovani, L. Larcher, P. Pavan

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Profiling charge distribution in NROM™ devices

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Lior Avital, Andrea Padovani, Luca Larcher, Ilan Bloom, Ruzin Arie, Paolo Pavan

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, Boaz Eitan

Temperature Monitor: A New Tool to Profile Charge Distribution in NROM Memory Devices

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2004 M. Bonaiuti, L. Rovati, P. Pavan

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Design of a High-Performance Optical System for Angular Position Measurement: Optical and Electronic Strategies for Uncertainty Reduction

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2005 F. Bonizzi, U. Manzoli, D. Lizicro, D. Liziero, L. Larcher, L. Larchen, P. Pavan

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An embedded system for wireless data communications on trains

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L. Larcher, P. Pavan

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, A. Maurelli

Flash memories for SoC: an overview on system constraints and technology issues

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A. Bertacchini, P. Pavan

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, L. Tamagnini, L. Fergnani

Control of brushless motor with hybrid redundancy for force feedback in steer-by-wire applications

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2004 L. Larcher, P. Pavan

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, B. Eitan

On the Physical Mechanism of the NROM Memory Erase

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L. Larcher, P. Pavan

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Statistical Simulations for Flash Memory Reliability Analysis and Prediction

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L. Larcher, P. Pavan

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Statistical simulations to inspect and predict data retention and program disturbs in flash memories

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Paolo Pavan

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, Luca Larcher, Andrea Marmiroli

Floating Gate Devices: Operation and Compact Modeling

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2003 P. Pavan

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, L. Larcher, M. Cuozzo, P. Zuliani, A. Conte

A complete model of E/sup 2/PROM memory cells for circuit simulations

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P. Pavan

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, A. Owens

CMOS and Interconnect Reliability - Flash Reliability/Hot Carrier Effects

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2002 L. Larcher, G. Verzellesi, P. Pavan

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, E. Lusky, I. Bloom, B. Eitan

Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells

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Ilan Bloom, Paolo Pavan

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, Boaz Eitan

NROMTM––a new technology for non-volatile memory products

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L. Larcher, S. Bertulu, P. Pavan

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SILC effects on E/sup 2/PROM memory cell reliability

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Luca Larcher, Paolo Pavan

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A new analytical model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) current suitable for compact modeling

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L. Larcher, S. Bertulu, P. Pavan

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A complete study of SILC effects on E2PROM reliability

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L. Larcher, P. Pavan

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, S. Pietri, L. Albani, A. Marmiroli

A new compact DC model of floating gate memory cells without capacitive coupling coefficients

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2001 Ilan Bloom, Paolo Pavan

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, Boaz Eitan

NROM™ — a new non-volatile memory technology: from device to products

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L. Larcher, P. Pavan

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, F. Pellizzer, G. Ghidini

A new model of gate capacitance as a simple tool to extract MOS parameters

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