Markus Weyers
www.fbh-berlin.de
0000-0001-7431-4166
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
14 papers found
Refreshing results…
234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer
Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs
Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs
Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities
Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopy
Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots
Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films
Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen
Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning
Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs
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