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American Institute of Physics, Journal of Applied Physics, 8(124), p. 084504

DOI: 10.1063/1.5028047

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Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The degradation behavior of ultraviolet-B light emitting diodes (UV-B LEDs) emitting near 310 nm has been investigated and a method to localize the degradation effects is presented. Measurements of the electro-optical characteristics of UV-B LEDs, during a 200 h constant-current degradation study, showed an initial fast decrease in the optical power accompanied by a decrease in the drive voltage and an increase in the capacitance. Furthermore, by using a specially designed contact geometry, it was possible to separate the degradation of the electrical properties of the p-layers and p-contacts from the degradation of the active region and n-side of the LED heterostructure. Our investigations show that the initial changes in capacitance and voltage can be attributed to changes in the p-side and at the p-contact of the LED, which can be explained by an activation of Mg dopants.