Changhwan Choi
0000-0002-8386-3885
13 papers found
Refreshing results…
Synaptic Characteristics of Amorphous Boron Nitride–based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering
3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks
The coexistence of threshold and memory switching characteristics of ALD HfO2 memristor synaptic arrays for energy-efficient neuromorphic computing
Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics
Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface
Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device
The observation of resistive switching characteristics using transparent and biocompatible Cu2+-doped salmon DNA composite thin film
Silver‐Adapted Diffusive Memristor Based on Organic Nitrogen‐Doped Graphene Oxide Quantum Dots (N‐GOQDs) for Artificial Biosynapse Applications
Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics
Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device
Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing
Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device
Missing publications? Search for publications with a matching author name.