Michael Kneissl
www.ifkp.tu-berlin.de
0000-0003-1476-598X
30 papers found
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Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
Thin-film flip-chip UVB LEDs realized by electrochemical etching
Polarization fields in semipolar (202¯1¯) and (202¯1) InGaN light emitting diodes
Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes
Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen
Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning
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