Sungjun Kim
0000-0002-9873-2474
Seoul National University
16 papers found
Refreshing results…
Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer
Effect of Ag source layer thickness on the switching mechanism of TiN/Ag/SiN x /TiN conductive bridging random access memory observed at sub-µA current
Synaptic Characteristics of Amorphous Boron Nitride–based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering
HfO x -based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application
Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation
Fabrication and Characterization of TiO x Memristor for Synaptic Device Application
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation
Coexistence of unipolar and bipolar switching in nanocrystalline spinel ferrite ZnFe2O4 thin films synthesized by sol-gel method
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate
Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications
Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x
Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device
Dopant concentration dependent resistive switching characteristics in Cu/SiN x /Si structure
Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
Missing publications? Search for publications with a matching author name.